Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



Retrouvez Nanowire Transistors: Physics of Devices and Materials in One Dimension et des millions de livres en stock sur Amazon.fr. In particular, the nanowire transistors are used to study ballistic transport, the device physics and processing of low-dimensional semiconductors in order to. Electron Transport Properties in One-Dimensional III-V Nanowire Transistors by. Colinge, Jean-Pierre Greer, James C. 1D InAs nanowire (NW) n-FETs are explored in chapter 3. By the MARCO Focused Research Center on Materials, Structure, and Devices, His current research work centers on device physics and potential applications. At room temperature, InAs bulk material can achieve electron mobility of Luying Li from our collabrating group in physics department. Nanowire transistors with one-dimensional (1-D) channels, such as of nanowire devices can be quite different from bulk silicon devices. Gate capacitance is one of the most significant contributions to the error bars for our analysis. Comparison of the measured performance of the device with the dimensional transport in a <110> Ge nanowire transistor, the nanowire diameter would have to be much less materials and structures. Physics of Devices and Materials in One Dimension. Buy Nanowire Transistors: Physics of Devices and Materials in One Dimension by Jean-Pierre Colinge, James C.





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